any changing of specification will not be informed individual MMBD914 surface mount switching diode maximum ratings rating symbol value unit reverse voltage v r 100 vdc forward current i f 200 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr 5 board (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c device marking MMBD914 = 5d electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics reverse breakdown voltage (i r = 100 adc) v (br) 100 e vdc reverse voltage leakage current (v r = 20 vdc) (v r = 75 vdc) i r e e 25 5.0 nadc adc diode capacitance (v r = 0, f = 1.0 mhz) c t e 4.0 pf forward voltage (i f = 10 madc) v f e 1.0 vdc reverse recovery time (i f = i r = 10 madc) (figure 1) t rr e 4.0 ns 1. fr 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. features fast switching speed surface mount package ideally suited for automatic insertion for general purpose switching applications high conductance 1 anode 3 c a thode k j c h l a b s g v 3 1 2 d t o p v i e w d i m m i n m a x a 2 . 8 0 0 3 . 0 4 0 b 1 . 2 0 0 1 . 4 0 0 c 0 . 8 9 0 1 . 1 1 0 d 0 . 3 7 0 0 . 5 0 0 g 1 . 7 8 0 2 . 0 4 0 h 0 . 0 1 3 0 . 1 0 0 j 0 . 0 8 5 0 . 1 7 7 k 0 . 4 5 0 0 . 6 0 0 l 0 . 8 9 0 1 . 0 2 0 s 2 . 1 0 0 2 . 5 0 0 v 0 . 4 5 0 0 . 6 0 0 a l l d i m e n s i o n i n m m s o t - 2 3 1 2 3 h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual MMBD914 surface mount switching diode notes: 1. a 2.0 k w variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 w 0.1 m f dut v r 100 m h 0.1 m f 50 w output pulse generator 50 w i nput sampling oscilloscopes t r t p t 10% 90% i f i r t rr t i r(rec ) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec ) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit figure 2. forward voltage v f , forward voltage (v) 1.0 10 100 0.1 figure 3. leakage current v r , r everse vo ltage (v ) 10 0 1.0 0.1 0.001 0.01 10 20 30 40 50 i 1. 0 1.2 0.2 0.4 0.6 0.8 figure 4. capacitance v r , reverse voltage (v) 0 c 0.68 0.64 0.60 0.52 0.56 2.0 4.0 6.0 8.0 , f orward curren t (ma) f t a = 85 c t a = 40 c t a = 25 c , d iode capacitance (pf) d t a = 25 c t a = 55 c t a = 85 c t a = 150 c t a = 125 c i r , r everse curren t ( m a) http://www.secosgmbh.com ele k troni sche bauelemente 01-jun-2002 rev. a page 2 of 2
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